BUK7S1R5-40HJ Nexperia
Hersteller: NexperiaNexperia’s LFPAK88 delivers industry leading power density in truly innovative 8mm x 8mm footprint
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 47+ | 3.37 EUR |
| 50+ | 2.96 EUR |
| 51+ | 2.82 EUR |
| 100+ | 2.02 EUR |
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Technische Details BUK7S1R5-40HJ Nexperia
Description: MOSFET N-CH 40V 260A LFPAK88, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 260A (Ta), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V, Power Dissipation (Max): 242W (Ta), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): +20V, -10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK7S1R5-40HJ nach Preis ab 2.02 EUR bis 7.8 EUR
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BUK7S1R5-40HJ | Hersteller : Nexperia |
Nexperia’s LFPAK88 delivers industry leading power density in truly innovative 8mm x 8mm footprint |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7S1R5-40HJ | Hersteller : Nexperia |
Nexperia’s LFPAK88 delivers industry leading power density in truly innovative 8mm x 8mm footprint |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7S1R5-40HJ | Hersteller : Nexperia |
MOSFET BUK7S1R5-40H/SOT1235/LFPAK88 |
auf Bestellung 7228 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK7S1R5-40HJ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 260A LFPAK88 Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Power Dissipation (Max): 242W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 16 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK7S1R5-40HJ | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK7S1R5-40HJ - Leistungs-MOSFET, n-Kanal, 40 V, 260 A, 0.00124 ohm, LFPAK88, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 260 Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 242 Gate-Source-Schwellenspannung, max.: 3 Verlustleistung: 242 Bauform - Transistor: LFPAK88 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 4 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.00124 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.00124 SVHC: No SVHC (17-Jan-2022) |
auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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| BUK7S1R5-40HJ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 260A 5-Pin(4+Tab) LFPAK T/R |
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| BUK7S1R5-40HJ | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 260A 5-Pin(4+Tab) LFPAK T/R |
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| BUK7S1R5-40HJ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 260A; Idm: 1088A; 242W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 260A Pulsed drain current: 1088A Power dissipation: 242W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 3.27mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 2000 Stücke |
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BUK7S1R5-40HJ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 260A LFPAK88 Packaging: Tape & Reel (TR) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260A (Ta) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 25A, 10V Power Dissipation (Max): 242W (Ta) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): +20V, -10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6712 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK7S1R5-40HJ | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 260A; Idm: 1088A; 242W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 260A Pulsed drain current: 1088A Power dissipation: 242W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 3.27mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |