Technische Details BUK7Y20-30B,115 Nexperia
Description: NEXPERIA BUK7Y20 - N-CHANNEL TRE, Packaging: Bulk, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39.5A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V, Power Dissipation (Max): 59W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 688 pF @ 25 V.
Weitere Produktangebote BUK7Y20-30B,115 nach Preis ab 0.7 EUR bis 0.7 EUR
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| BUK7Y20-30B,115 | Hersteller : Nexperia USA Inc. |
 Description: NEXPERIA BUK7Y20 - N-CHANNEL TREPackaging: Bulk Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39.5A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 59W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 688 pF @ 25 V |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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