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BUK7Y22-100EX

BUK7Y22-100EX Nexperia


3012595554136698buk7y22-100e.pdf Hersteller: Nexperia
Trans MOSFET N-CH 100V 49A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 124500 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1500+0.79 EUR
3000+ 0.71 EUR
7500+ 0.67 EUR
9000+ 0.63 EUR
10500+ 0.58 EUR
Mindestbestellmenge: 1500
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Technische Details BUK7Y22-100EX Nexperia

Description: MOSFET N-CH 100V 49A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V.

Weitere Produktangebote BUK7Y22-100EX nach Preis ab 0.58 EUR bis 0.8 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BUK7Y22-100EX BUK7Y22-100EX Hersteller : Nexperia 3012595554136698buk7y22-100e.pdf Trans MOSFET N-CH 100V 49A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 124500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1500+0.8 EUR
3000+ 0.71 EUR
7500+ 0.67 EUR
9000+ 0.63 EUR
10500+ 0.58 EUR
Mindestbestellmenge: 1500
BUK7Y22-100EX BUK7Y22-100EX Hersteller : NEXPERIA 3012595554136698buk7y22-100e.pdf Trans MOSFET N-CH 100V 49A Automotive 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 124500 Stücke:
Lieferzeit 14-21 Tag (e)
BUK7Y22-100EX BUK7Y22-100EX Hersteller : Nexperia 3012595554136698buk7y22-100e.pdf Trans MOSFET N-CH 100V 49A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
BUK7Y22-100EX Hersteller : NEXPERIA BUK7Y22-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 196A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 196A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK7Y22-100EX BUK7Y22-100EX Hersteller : Nexperia USA Inc. BUK7Y22-100E.pdf Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Produkt ist nicht verfügbar
BUK7Y22-100EX BUK7Y22-100EX Hersteller : Nexperia USA Inc. BUK7Y22-100E.pdf Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Produkt ist nicht verfügbar
BUK7Y22-100EX BUK7Y22-100EX Hersteller : Nexperia BUK7Y22_100E-2937739.pdf MOSFET BUK7Y22-100E/SOT669/LFPAK
Produkt ist nicht verfügbar
BUK7Y22-100EX Hersteller : NEXPERIA BUK7Y22-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 196A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 196A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 61mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar