auf Bestellung 1360 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 2.63 EUR |
| 25+ | 2.16 EUR |
| 100+ | 1.67 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.4 EUR |
| 1500+ | 1.16 EUR |
| 3000+ | 1.04 EUR |
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Technische Details BUK7Y7R6-40EX Nexperia
Description: MOSFET N-CH 40V 79A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V, Power Dissipation (Max): 94.3W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V, Qualification: AEC-Q100.
Weitere Produktangebote BUK7Y7R6-40EX
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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BUK7Y7R6-40EX | Hersteller : Nexperia |
 Trans MOSFET N-CH 40V 79A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK7Y7R6-40EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 79A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y7R6-40EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 79A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y7R6-40EX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 79A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y7R6-40EX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 79A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK7Y7R6-40EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Power dissipation: 94.3W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 26.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK7Y7R6-40EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 79A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 94.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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BUK7Y7R6-40EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 79A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 94.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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BUK7Y7R6-40EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; 94.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Power dissipation: 94.3W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 26.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |