Produkte > NEXPERIA USA INC. > BUK7Y9R9-80EX
BUK7Y9R9-80EX

BUK7Y9R9-80EX Nexperia USA Inc.


BUK7Y9R9-80E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 89A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.72 EUR
3000+ 1.62 EUR
Mindestbestellmenge: 1500
Produktrezensionen
Produktbewertung abgeben

Technische Details BUK7Y9R9-80EX Nexperia USA Inc.

Description: MOSFET N-CH 80V 89A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q100.

Weitere Produktangebote BUK7Y9R9-80EX nach Preis ab 1.49 EUR bis 3.93 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BUK7Y9R9-80EX BUK7Y9R9-80EX Hersteller : Nexperia BUK7Y9R9_80E-2937577.pdf MOSFET BUK7Y9R9-80E/SOT669/LFPAK
auf Bestellung 25453 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.77 EUR
17+ 3.09 EUR
100+ 2.41 EUR
500+ 2.04 EUR
1000+ 1.66 EUR
1500+ 1.62 EUR
3000+ 1.49 EUR
Mindestbestellmenge: 14
BUK7Y9R9-80EX BUK7Y9R9-80EX Hersteller : Nexperia USA Inc. BUK7Y9R9-80E.pdf Description: MOSFET N-CH 80V 89A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 51.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.93 EUR
10+ 3.21 EUR
100+ 2.49 EUR
500+ 2.11 EUR
Mindestbestellmenge: 7
BUK7Y9R9-80EX Hersteller : NEXPERIA BUK7Y9R9-80E.pdf BUK7Y9R9-80EX SMD N channel transistors
Produkt ist nicht verfügbar