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BUK9219-55A,118

BUK9219-55A,118 Nexperia USA Inc.


BUK9219-55A.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 32500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.62 EUR
5000+ 1.55 EUR
12500+ 1.47 EUR
Mindestbestellmenge: 2500
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Technische Details BUK9219-55A,118 Nexperia USA Inc.

Description: MOSFET N-CH 55V 55A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 55 V, Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote BUK9219-55A,118 nach Preis ab 1.57 EUR bis 4.03 EUR

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BUK9219-55A,118 BUK9219-55A,118 Hersteller : Nexperia USA Inc. BUK9219-55A.pdf Description: MOSFET N-CH 55V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 34830 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.9 EUR
10+ 3.21 EUR
100+ 2.5 EUR
500+ 2.12 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 7
BUK9219-55A,118 BUK9219-55A,118 Hersteller : Nexperia BUK9219_55A-2937691.pdf MOSFET BUK9219-55A/SOT428/DPAK
auf Bestellung 6674 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.03 EUR
15+ 3.61 EUR
100+ 2.83 EUR
500+ 2.33 EUR
1000+ 1.84 EUR
2500+ 1.72 EUR
10000+ 1.57 EUR
Mindestbestellmenge: 13
BUK9219-55A,118 BUK9219-55A,118 Hersteller : Nexperia 4374743297895427buk9219-55a.pdf Trans MOSFET N-CH 55V 55A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
BUK9219-55A,118 BUK9219-55A,118 Hersteller : NEXPERIA 4374743297895427buk9219-55a.pdf Trans MOSFET N-CH 55V 55A Automotive 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
BUK9219-55A,118 Hersteller : NEXPERIA BUK9219-55A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 38A; Idm: 219A; 114W; DPAK
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 55V
Drain current: 38A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 219A
Mounting: SMD
Case: DPAK
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK9219-55A,118 Hersteller : NEXPERIA BUK9219-55A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 38A; Idm: 219A; 114W; DPAK
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 55V
Drain current: 38A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 219A
Mounting: SMD
Case: DPAK
Produkt ist nicht verfügbar