BUK953R5-60E,127 NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Power Dissipation (Max): 293W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 333+ | 2.21 EUR |
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Technische Details BUK953R5-60E,127 NXP USA Inc.
Description: MOSFET N-CH 60V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Ta), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V, Power Dissipation (Max): 293W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK953R5-60E,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| BUK953R5-60E,127 | Hersteller : NXP |
Description: NXP - BUK953R5-60E,127 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK953R5-60E,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-220AB Rail |
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