BUK9606-55A,118 NXP USA Inc.
auf Bestellung 550 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 257+ | 3.04 EUR |
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Technische Details BUK9606-55A,118 NXP USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tj), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 55 V, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V.
Weitere Produktangebote BUK9606-55A,118 nach Preis ab 7.01 EUR bis 7.8 EUR
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BUK9606-55A,118 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 55V 75A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V |
auf Bestellung 43 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9606-55A,118 | Hersteller : Nexperia |
MOSFET TAPE13 PWR-MOS |
auf Bestellung 4729 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9606-55A,118 Produktcode: 190055 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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BUK9606-55A,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tj) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V |
Produkt ist nicht verfügbar |