BUK9615-100E,118 NEXPERIA
Hersteller: NEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 266A; 182W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47A
Pulsed drain current: 266A
Power dissipation: 182W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
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Technische Details BUK9615-100E,118 NEXPERIA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 266A; 182W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 47A, Pulsed drain current: 266A, Power dissipation: 182W, Case: D2PAK; SOT404, Gate-source voltage: ±10V, On-state resistance: 41mΩ, Mounting: SMD, Gate charge: 60nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, Anzahl je Verpackung: 1 Stücke.
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BUK9615-100E,118 | Hersteller : NXP USA Inc. |
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BUK9615-100E,118 | Hersteller : Nexperia |
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| BUK9615-100E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 266A; 182W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47A Pulsed drain current: 266A Power dissipation: 182W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 41mΩ Mounting: SMD Gate charge: 60nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |