BUK9616-75B,118 NEXPERIA
Hersteller: NEXPERIACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W
Case: D2PAK; SOT404
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain-source voltage: 75V
On-state resistance: 34mΩ
Type of transistor: N-MOSFET
Power dissipation: 157W
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: 270A
Drain current: 47A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 553 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.82 EUR |
| 44+ | 1.64 EUR |
| 55+ | 1.3 EUR |
| 59+ | 1.23 EUR |
| 800+ | 1.22 EUR |
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Technische Details BUK9616-75B,118 NEXPERIA
Description: MOSFET N-CH 75V 67A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9616-75B,118 nach Preis ab 1.23 EUR bis 3.82 EUR
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BUK9616-75B,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 47A; Idm: 270A; 157W Case: D2PAK; SOT404 Mounting: SMD Kind of package: reel; tape Application: automotive industry Drain-source voltage: 75V On-state resistance: 34mΩ Type of transistor: N-MOSFET Power dissipation: 157W Polarisation: unipolar Features of semiconductor devices: logic level Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±15V Pulsed drain current: 270A Drain current: 47A |
auf Bestellung 553 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9616-75B,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 67A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9616-75B,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 67A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4034 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 6355 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9616-75B,118 | Hersteller : Nexperia |
MOSFET BUK9616-75B/SOT404/D2PAK |
auf Bestellung 5980 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9616-75B,118 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 75V 67A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |