BUK961R6-40E,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 5.49 EUR |
1600+ | 4.7 EUR |
2400+ | 4.43 EUR |
5600+ | 4.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK961R6-40E,118 Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK961R6-40E,118 nach Preis ab 6.18 EUR bis 9.1 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
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BUK961R6-40E,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 16400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7101 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK961R6-40E,118 | Hersteller : NEXPERIA | Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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BUK961R6-40E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1348A; 349W Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 3.1mΩ Gate-source voltage: ±10V Mounting: SMD Pulsed drain current: 1348A Power dissipation: 349W Gate charge: 0.12µC Polarisation: unipolar Drain current: 120A Kind of channel: enhanced Drain-source voltage: 40V Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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BUK961R6-40E,118 | Hersteller : Nexperia | MOSFET N-Chan 40V 120A |
Produkt ist nicht verfügbar |
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BUK961R6-40E,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1348A; 349W Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 3.1mΩ Gate-source voltage: ±10V Mounting: SMD Pulsed drain current: 1348A Power dissipation: 349W Gate charge: 0.12µC Polarisation: unipolar Drain current: 120A Kind of channel: enhanced Drain-source voltage: 40V |
Produkt ist nicht verfügbar |