BUK9629-100B,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 46A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 2.2 EUR |
| 1600+ | 1.87 EUR |
| 2400+ | 1.77 EUR |
| 5600+ | 1.71 EUR |
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Technische Details BUK9629-100B,118 Nexperia USA Inc.
Description: MOSFET N-CH 100V 46A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9629-100B,118 nach Preis ab 1.73 EUR bis 3.98 EUR
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BUK9629-100B,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 46A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 27mOhm @ 25A, 10V Power Dissipation (Max): 157W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4360 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 9309 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9629-100B,118 | Hersteller : Nexperia |
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BUK9629-100B,118 Produktcode: 187149 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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BUK9629-100B,118 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 46A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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BUK9629-100B,118 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 46A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| BUK9629-100B,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 186A; 157W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Pulsed drain current: 186A Power dissipation: 157W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 75mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9629-100B,118 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 32A; Idm: 186A; 157W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 32A Pulsed drain current: 186A Power dissipation: 157W Case: D2PAK; SOT404 Gate-source voltage: ±15V On-state resistance: 75mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |