Produkte > NEXPERIA USA INC. > BUK962R8-60E,118
BUK962R8-60E,118

BUK962R8-60E,118 Nexperia USA Inc.


BUK962R8-60E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.01 EUR
10+ 6.74 EUR
Mindestbestellmenge: 4
Produktrezensionen
Produktbewertung abgeben

Technische Details BUK962R8-60E,118 Nexperia USA Inc.

Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V, Power Dissipation (Max): 324W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote BUK962R8-60E,118

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BUK962R8-60E,118 BUK962R8-60E,118 Hersteller : NEXPERIA 2035783233504342buk962r8-60e.pdf Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
BUK962R8-60E,118 BUK962R8-60E,118 Hersteller : Nexperia USA Inc. BUK962R8-60E.pdf Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BUK962R8-60E,118 BUK962R8-60E,118 Hersteller : Nexperia BUK962R8-60E-1598985.pdf MOSFET N-channel TrenchMOS logic level FET
Produkt ist nicht verfügbar