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BUK965R8-100E,118

BUK965R8-100E,118 Nexperia USA Inc.


BUK965R8-100E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2684 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+5.21 EUR
1600+ 4.46 EUR
2400+ 4.2 EUR
Mindestbestellmenge: 800
Produktrezensionen
Produktbewertung abgeben

Technische Details BUK965R8-100E,118 Nexperia USA Inc.

Description: MOSFET N-CH 100V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BUK965R8-100E,118 nach Preis ab 4.24 EUR bis 8.63 EUR

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BUK965R8-100E,118 BUK965R8-100E,118 Hersteller : Nexperia USA Inc. BUK965R8-100E.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 5V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17460 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3015 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.63 EUR
10+ 7.25 EUR
100+ 5.87 EUR
Mindestbestellmenge: 4
BUK965R8-100E,118 BUK965R8-100E,118 Hersteller : Nexperia BUK965R8_100E-2937719.pdf MOSFET BUK965R8-100E/SOT404/D2PAK
auf Bestellung 2532 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.63 EUR
10+ 7.25 EUR
25+ 6.99 EUR
100+ 5.85 EUR
250+ 5.67 EUR
500+ 4.97 EUR
800+ 4.24 EUR
Mindestbestellmenge: 7
BUK965R8-100E,118 BUK965R8-100E,118 Hersteller : NEXPERIA 1747252239799897buk965r8-100e.pdf Trans MOSFET N-CH 100V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
BUK965R8-100E,118 BUK965R8-100E,118 Hersteller : Nexperia 1747252239799897buk965r8-100e.pdf Trans MOSFET N-CH 100V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
BUK965R8-100E,118 Hersteller : NEXPERIA BUK965R8-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 591A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 105A
Pulsed drain current: 591A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
BUK965R8-100E,118 Hersteller : NEXPERIA BUK965R8-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 591A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 105A
Pulsed drain current: 591A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±10V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar