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BUK966R5-60E,118

BUK966R5-60E,118 Nexperia USA Inc.


BUK966R5-60E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 4794 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+3.52 EUR
1600+ 2.92 EUR
2400+ 2.72 EUR
Mindestbestellmenge: 800
Produktrezensionen
Produktbewertung abgeben

Technische Details BUK966R5-60E,118 Nexperia USA Inc.

Description: MOSFET N-CH 60V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V, Power Dissipation (Max): 182W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V.

Weitere Produktangebote BUK966R5-60E,118 nach Preis ab 2.35 EUR bis 5.95 EUR

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BUK966R5-60E,118 BUK966R5-60E,118 Hersteller : Nexperia BUK966R5_60E-2938039.pdf MOSFET BUK966R5-60E/SOT404/D2PAK
auf Bestellung 9327 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.2 EUR
13+ 4.32 EUR
100+ 3.43 EUR
250+ 3.17 EUR
500+ 2.89 EUR
800+ 2.47 EUR
2400+ 2.35 EUR
Mindestbestellmenge: 10
BUK966R5-60E,118 BUK966R5-60E,118 Hersteller : Nexperia USA Inc. BUK966R5-60E.pdf Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 25A, 10V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
auf Bestellung 4794 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.95 EUR
10+ 5.34 EUR
100+ 4.29 EUR
Mindestbestellmenge: 5
BUK966R5-60E,118 Hersteller : NEXPERIA BUK966R5-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 452A; 182W
Case: D2PAK; SOT404
Mounting: SMD
Application: automotive industry
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 452A
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 14.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 182W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK966R5-60E,118 Hersteller : NEXPERIA BUK966R5-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; Idm: 452A; 182W
Case: D2PAK; SOT404
Mounting: SMD
Application: automotive industry
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 452A
Drain-source voltage: 60V
Drain current: 75A
On-state resistance: 14.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 182W
Produkt ist nicht verfügbar