BUK9K45-100E,115 NEXPERIA
Hersteller: NEXPERIACategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Drain-source voltage: 100V
Drain current: 15A
On-state resistance: 124mΩ
Type of transistor: N-MOSFET x2
Application: automotive industry
Power dissipation: 53W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33.5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 83A
Mounting: SMD
Case: LFPAK33; SOT1210
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1275 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.46 EUR |
| 55+ | 1.32 EUR |
| 67+ | 1.07 EUR |
| 71+ | 1.01 EUR |
| 500+ | 0.97 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9K45-100E,115 NEXPERIA
Description: MOSFET 2N-CH 100V 21A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 53W, Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 21A, Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V, Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active.
Weitere Produktangebote BUK9K45-100E,115 nach Preis ab 0.97 EUR bis 3.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BUK9K45-100E,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W Drain-source voltage: 100V Drain current: 15A On-state resistance: 124mΩ Type of transistor: N-MOSFET x2 Application: automotive industry Power dissipation: 53W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33.5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 83A Mounting: SMD Case: LFPAK33; SOT1210 |
auf Bestellung 1275 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
BUK9K45-100E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||
 |
BUK9K45-100E,115 | Hersteller : Nexperia |
MOSFET BUK9K45-100E/SOT1205/LFPAK56D |
auf Bestellung 7500 Stücke: Lieferzeit 473-487 Tag (e) |
|
||||||||||||||
|
|
BUK9K45-100E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||
 |
BUK9K45-100E,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 21A Automotive 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |