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BUK9K52-60RAX

BUK9K52-60RAX Nexperia USA Inc.


BUK9K52-60RA.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 16A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.19 EUR
Mindestbestellmenge: 1500
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Technische Details BUK9K52-60RAX Nexperia USA Inc.

Description: MOSFET 2N-CH 60V 16A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 32W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V, Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BUK9K52-60RAX nach Preis ab 1.01 EUR bis 2.7 EUR

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BUK9K52-60RAX BUK9K52-60RAX Hersteller : Nexperia BUK9K52_60RA-1948272.pdf MOSFET BUK9K52-60RA/SOT1205/LFPAK56D
auf Bestellung 12795 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
21+2.54 EUR
25+ 2.1 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.13 EUR
1500+ 1.06 EUR
3000+ 1.01 EUR
Mindestbestellmenge: 21
BUK9K52-60RAX BUK9K52-60RAX Hersteller : Nexperia USA Inc. BUK9K52-60RA.pdf Description: MOSFET 2N-CH 60V 16A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V
Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2438 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.7 EUR
12+ 2.22 EUR
100+ 1.73 EUR
500+ 1.47 EUR
Mindestbestellmenge: 10
BUK9K52-60RAX Hersteller : NEXPERIA BUK9K52-60RA.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 11A; Idm: 64A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 64A
Power dissipation: 32W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9K52-60RAX Hersteller : NEXPERIA BUK9K52-60RA.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 11A; Idm: 64A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 64A
Power dissipation: 32W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar