auf Bestellung 981 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.98 EUR |
| 16+ | 3.3 EUR |
| 100+ | 2.65 EUR |
| 250+ | 2.47 EUR |
| 500+ | 2.22 EUR |
| 1000+ | 1.9 EUR |
| 1500+ | 1.79 EUR |
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Technische Details BUK9K5R1-30EX Nexperia
Description: MOSFET 2N-CH 30V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 68W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V, Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V, Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Part Status: Active, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote BUK9K5R1-30EX nach Preis ab 2.28 EUR bis 4.08 EUR
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BUK9K5R1-30EX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET 2N-CH 30V 40A LFPAK56DPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1245 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9K5R1-30EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 40A Automotive 8-Pin LFPAK-D T/R |
Produkt ist nicht verfügbar |
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| BUK9K5R1-30EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 329A Power dissipation: 68W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 10mΩ Mounting: SMD Gate charge: 26.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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BUK9K5R1-30EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 40A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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| BUK9K5R1-30EX | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 329A; 68W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 329A Power dissipation: 68W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 10mΩ Mounting: SMD Gate charge: 26.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |