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BUK9M11-40EX

BUK9M11-40EX Nexperia USA Inc.


BUK9M11-40E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 53A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.84 EUR
Mindestbestellmenge: 1500
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Technische Details BUK9M11-40EX Nexperia USA Inc.

Description: MOSFET N-CH 40V 53A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote BUK9M11-40EX nach Preis ab 0.66 EUR bis 1.98 EUR

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BUK9M11-40EX BUK9M11-40EX Hersteller : Nexperia USA Inc. BUK9M11-40E.pdf Description: MOSFET N-CH 40V 53A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2976 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.98 EUR
16+ 1.71 EUR
100+ 1.18 EUR
500+ 0.99 EUR
Mindestbestellmenge: 14
BUK9M11-40EX BUK9M11-40EX Hersteller : Nexperia BUK9M11_40E-2938156.pdf MOSFET BUK9M11-40E/SOT1210/mLFPAK
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
27+1.98 EUR
31+ 1.72 EUR
100+ 1.19 EUR
500+ 0.99 EUR
1500+ 0.83 EUR
3000+ 0.69 EUR
9000+ 0.66 EUR
Mindestbestellmenge: 27
BUK9M11-40EX BUK9M11-40EX Hersteller : NEXPERIA 1747018760854521buk9m11-40e.pdf Trans MOSFET N-CH 40V 53A Automotive 8-Pin LFPAK EP T/R
Produkt ist nicht verfügbar
BUK9M11-40EX BUK9M11-40EX Hersteller : Nexperia 1747018760854521buk9m11-40e.pdf Trans MOSFET N-CH 40V 53A Automotive AEC-Q101 8-Pin LFPAK EP T/R
Produkt ist nicht verfügbar
BUK9M11-40EX BUK9M11-40EX Hersteller : Nexperia 1747018760854521buk9m11-40e.pdf Trans MOSFET N-CH 40V 53A Automotive AEC-Q101 8-Pin LFPAK EP T/R
Produkt ist nicht verfügbar
BUK9M11-40EX Hersteller : NEXPERIA BUK9M11-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9M11-40EX Hersteller : NEXPERIA BUK9M11-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 37A
Pulsed drain current: 211A
Power dissipation: 62W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 13.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar