auf Bestellung 1500 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 2.18 EUR |
| 30+ | 1.79 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.94 EUR |
| 1500+ | 0.92 EUR |
| 3000+ | 0.91 EUR |
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Technische Details BUK9M12-60EX Nexperia
Description: MOSFET N-CH 60V 54A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 2769 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M12-60EX nach Preis ab 1.27 EUR bis 2.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK9M12-60EX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 54A LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 2769 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1170 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9M12-60EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9M12-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 54 A, 0.009 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 79W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm |
auf Bestellung 2148 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M12-60EX | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9M12-60EX - Leistungs-MOSFET, n-Kanal, 60 V, 54 A, 0.009 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 79W Anzahl der Pins: 8Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm |
auf Bestellung 2148 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M12-60EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 60V 54A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M12-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 54A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M12-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 54A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M12-60EX | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 54A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| BUK9M12-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 216A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 27mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9M12-60EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 54A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 2769 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK9M12-60EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 38A; Idm: 216A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 38A Pulsed drain current: 216A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 27mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |