auf Bestellung 7249 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.15 EUR |
| 30+ | 1.74 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 0.99 EUR |
| 1500+ | 0.96 EUR |
| 3000+ | 0.86 EUR |
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Technische Details BUK9M23-80EX Nexperia
Description: MOSFET N-CH 80V 37A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M23-80EX nach Preis ab 1.16 EUR bis 5.95 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK9M23-80EX | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 80V 37A LFPAK33Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1390 Stücke: Lieferzeit 21-28 Tag (e) |
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| BUK9M23-80EX | Hersteller : NXP |
N-MOSFET 80V 37A 5V 79W AUTOMOTIVE BUK9M23-80EX TBUK9m23-80ex Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK9M23-80EX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 37A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M23-80EX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 37A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M23-80EX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 37A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M23-80EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 37A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M23-80EX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 37A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| BUK9M23-80EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 26A Pulsed drain current: 148A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 58mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9M23-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 37A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK9M23-80EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 26A Pulsed drain current: 148A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 58mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |