BUK9M6R6-30EX Nexperia
auf Bestellung 54000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.49 EUR |
| 3000+ | 0.45 EUR |
| 7500+ | 0.43 EUR |
| 9000+ | 0.4 EUR |
| 10500+ | 0.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9M6R6-30EX Nexperia
Description: MOSFET N-CH 30V 70A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2001 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M6R6-30EX nach Preis ab 0.37 EUR bis 1.48 EUR
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BUK9M6R6-30EX | Hersteller : Nexperia |
 Trans MOSFET N-CH 30V 70A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M6R6-30EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 70A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2001 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M6R6-30EX | Hersteller : Nexperia |
MOSFET BUK9M6R6-30E/SOT1210/mLFPAK |
auf Bestellung 1463 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M6R6-30EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 70A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2001 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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BUK9M6R6-30EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 70A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M6R6-30EX | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 70A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M6R6-30EX | Hersteller : Nexperia |
Trans MOSFET N-CH 30V 70A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| BUK9M6R6-30EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 30V Drain current: 54.7A On-state resistance: 13mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 75W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 309A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M6R6-30EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 30V Drain current: 54.7A On-state resistance: 13mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 75W Polarisation: unipolar Kind of package: reel; tape Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 309A |
Produkt ist nicht verfügbar |