BUK9M9R1-40EX Nexperia
auf Bestellung 2994 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 182+ | 0.87 EUR |
| 183+ | 0.83 EUR |
| 216+ | 0.68 EUR |
| 250+ | 0.65 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.42 EUR |
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Technische Details BUK9M9R1-40EX Nexperia
Description: MOSFET N-CH 40V 64A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9M9R1-40EX nach Preis ab 0.4 EUR bis 2.18 EUR
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BUK9M9R1-40EX | Hersteller : Nexperia |
 Trans MOSFET N-CH 40V 64A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
auf Bestellung 2994 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9M9R1-40EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 64A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1394 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9M9R1-40EX | Hersteller : Nexperia |
MOSFET BUK9M9R1-40E/SOT1210/mLFPAK |
auf Bestellung 1400 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9M9R1-40EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 64A Automotive 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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BUK9M9R1-40EX | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 64A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| BUK9M9R1-40EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45.5A; Idm: 258A; 75W Power dissipation: 75W Case: LFPAK33; SOT1210 Mounting: SMD Kind of package: reel; tape Application: automotive industry On-state resistance: 18.1mΩ Drain current: 45.5A Polarisation: unipolar Drain-source voltage: 40V Type of transistor: N-MOSFET Gate charge: 16.2nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 258A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9M9R1-40EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 64A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| BUK9M9R1-40EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45.5A; Idm: 258A; 75W Power dissipation: 75W Case: LFPAK33; SOT1210 Mounting: SMD Kind of package: reel; tape Application: automotive industry On-state resistance: 18.1mΩ Drain current: 45.5A Polarisation: unipolar Drain-source voltage: 40V Type of transistor: N-MOSFET Gate charge: 16.2nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 258A |
Produkt ist nicht verfügbar |