Produkte > NEXPERIA USA INC. > BUK9MGP-55PTS,518

BUK9MGP-55PTS,518 Nexperia USA Inc.


Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 55V 16.9A 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5.2W (Tc), 3.9W (Tc)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc), 9.16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5178pF @ 25V, 2315pF @ 25V
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, 22.6mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 5V, 23nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 20-SO
Part Status: Obsolete
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Technische Details BUK9MGP-55PTS,518 Nexperia USA Inc.

Description: MOSFET 2N-CH 55V 16.9A 20SO, Packaging: Tape & Reel (TR), Package / Case: 20-SOIC (0.295", 7.50mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 5.2W (Tc), 3.9W (Tc), Drain to Source Voltage (Vdss): 55V, Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc), 9.16A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5178pF @ 25V, 2315pF @ 25V, Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, 22.6mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 54nC @ 5V, 23nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 20-SO, Part Status: Obsolete.