BUK9MJJ-65PLL,518 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 65V 11.6A 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.4W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 20-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 65V 11.6A 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.4W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 20-SO
Part Status: Obsolete
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Technische Details BUK9MJJ-65PLL,518 Nexperia USA Inc.
Description: MOSFET 2N-CH 65V 11.6A 20SO, Packaging: Tape & Reel (TR), Package / Case: 20-SOIC (0.295", 7.50mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4.4W (Tc), Drain to Source Voltage (Vdss): 65V, Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 25V, Rds On (Max) @ Id, Vgs: 15.5mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 30.8nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 20-SO, Part Status: Obsolete.