BUK9Y11-80EX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1023 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 3.69 EUR |
| 10+ | 3.07 EUR |
| 100+ | 2.44 EUR |
| 500+ | 2.06 EUR |
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Technische Details BUK9Y11-80EX Nexperia USA Inc.
Description: MOSFET N-CH 80V 84A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V, Power Dissipation (Max): 194W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote BUK9Y11-80EX nach Preis ab 1.43 EUR bis 3.72 EUR
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BUK9Y11-80EX | Hersteller : Nexperia |
MOSFET BUK9Y11-80E/SOT669/LFPAK |
auf Bestellung 2727 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9Y11-80EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 84A Automotive 5-Pin(4+Tab) LFPAK T/R |
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BUK9Y11-80EX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 84A Automotive 5-Pin(4+Tab) LFPAK T/R |
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BUK9Y11-80EX | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 84A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
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| BUK9Y11-80EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59.3A; Idm: 336A; 194W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59.3A Pulsed drain current: 336A Power dissipation: 194W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 27.6mΩ Mounting: SMD Gate charge: 44.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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BUK9Y11-80EX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 84A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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| BUK9Y11-80EX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59.3A; Idm: 336A; 194W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59.3A Pulsed drain current: 336A Power dissipation: 194W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 27.6mΩ Mounting: SMD Gate charge: 44.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |