BUK9Y12-40E,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 40V 52A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.87 EUR |
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Technische Details BUK9Y12-40E,115 Nexperia USA Inc.
Description: MOSFET N-CH 40V 52A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote BUK9Y12-40E,115 nach Preis ab 0.37 EUR bis 2.03 EUR
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BUK9Y12-40E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 52A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y12-40E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 52A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y12-40E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 52A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 15A, 10V Power Dissipation (Max): 65W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1423 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2055 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9Y12-40E,115 | Hersteller : Nexperia |
MOSFET BUK9Y12-40E/SOT669/LFPAK |
auf Bestellung 2734 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9Y12-40E,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9Y12-40E,115 - Leistungs-MOSFET, n-Kanal, 40 V, 52 A, 0.0088 ohm, SOT-669, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 65W Bauform - Transistor: SOT-669 Anzahl der Pins: 4Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0088ohm |
auf Bestellung 1049 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y12-40E,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 40V 52A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK9Y12-40E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 52A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| BUK9Y12-40E,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36.7A; Idm: 208A; 65W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 36.7A On-state resistance: 24.1mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 65W Polarisation: unipolar Gate charge: 9.8nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 208A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y12-40E,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36.7A; Idm: 208A; 65W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 36.7A On-state resistance: 24.1mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 65W Polarisation: unipolar Gate charge: 9.8nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 208A |
Produkt ist nicht verfügbar |