BUK9Y15-100E,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 69A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 1.75 EUR |
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Technische Details BUK9Y15-100E,115 Nexperia USA Inc.
Description: MOSFET N-CH 100V 69A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 69A (Tc), Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V, Power Dissipation (Max): 195W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9Y15-100E,115 nach Preis ab 1.72 EUR bis 3.9 EUR
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BUK9Y15-100E,115 | Hersteller : Nexperia |
MOSFET BUK9Y15-100E/SOT669/LFPAK |
auf Bestellung 901 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9Y15-100E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 69A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 20A, 10V Power Dissipation (Max): 195W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6139 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9Y15-100E,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 69A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK9Y15-100E,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 69A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| BUK9Y15-100E,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 49A Pulsed drain current: 274A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 45.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y15-100E,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 49A Pulsed drain current: 274A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 45.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |