BUK9Y19-75B,115 Nexperia
auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 1.32 EUR |
| 6000+ | 1.17 EUR |
| 12000+ | 1.04 EUR |
| 18000+ | 0.95 EUR |
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Technische Details BUK9Y19-75B,115 Nexperia
Description: MOSFET N-CH 75V 48.2A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48.2A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V, Power Dissipation (Max): 106W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3096 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9Y19-75B,115 nach Preis ab 0.93 EUR bis 3.25 EUR
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BUK9Y19-75B,115 | Hersteller : NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 34.1A Pulsed drain current: 192A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±15V On-state resistance: 48mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1500 Stücke: Lieferzeit 7-14 Tag (e) |
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BUK9Y19-75B,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 34.1A Pulsed drain current: 192A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±15V On-state resistance: 48mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y19-75B,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 48.2A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48.2A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3096 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 13500 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9Y19-75B,115 | Hersteller : Nexperia |
MOSFET BUK9Y19-75B/SOT669/LFPAK |
auf Bestellung 5282 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9Y19-75B,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 48.2A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48.2A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3096 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 16035 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9Y19-75B,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - BUK9Y19-75B,115 - Leistungs-MOSFET, n-Kanal, 75 V, 48.2 A, 0.0147 ohm, SC-100, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 75V rohsCompliant: Y-EX Dauer-Drainstrom Id: 48.2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.65V euEccn: NLR Verlustleistung: 106W Bauform - Transistor: SC-100 Anzahl der Pins: 4Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0147ohm |
auf Bestellung 783 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y19-75B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 75V 48.2A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK9Y19-75B,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 75V 48.2A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK9Y19-75B,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 75V 48.2A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |