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BUK9Y22-100E,115

BUK9Y22-100E,115 Nexperia USA Inc.


BUK9Y22-100E.pdf Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+1.35 EUR
3000+ 1.27 EUR
7500+ 1.21 EUR
Mindestbestellmenge: 1500
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Technische Details BUK9Y22-100E,115 Nexperia USA Inc.

Description: MOSFET N-CH 100V 49A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V, Qualification: AEC-Q101.

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BUK9Y22-100E,115 BUK9Y22-100E,115 Hersteller : Nexperia 241398921979427buk9y22-100e.pdf Trans MOSFET N-CH 100V 49A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 2550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
88+1.8 EUR
Mindestbestellmenge: 88
BUK9Y22-100E,115 BUK9Y22-100E,115 Hersteller : Nexperia 241398921979427buk9y22-100e.pdf Trans MOSFET N-CH 100V 49A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 2550 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
88+1.8 EUR
109+ 1.41 EUR
110+ 1.34 EUR
111+ 1.28 EUR
137+ 0.99 EUR
250+ 0.95 EUR
500+ 0.76 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 88
BUK9Y22-100E,115 BUK9Y22-100E,115 Hersteller : Nexperia BUK9Y22_100E-2937957.pdf MOSFET BUK9Y22-100E/SOT669/LFPAK
auf Bestellung 3012 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.81 EUR
23+ 2.29 EUR
100+ 1.78 EUR
500+ 1.51 EUR
1000+ 1.23 EUR
1500+ 1.16 EUR
3000+ 1.1 EUR
Mindestbestellmenge: 19
BUK9Y22-100E,115 BUK9Y22-100E,115 Hersteller : Nexperia USA Inc. BUK9Y22-100E.pdf Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8191 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.07 EUR
11+ 2.51 EUR
100+ 1.95 EUR
500+ 1.65 EUR
Mindestbestellmenge: 9
BUK9Y22-100E,115 BUK9Y22-100E,115 Hersteller : NEXPERIA 241398921979427buk9y22-100e.pdf Trans MOSFET N-CH 100V 49A Automotive 5-Pin(4+Tab) LFPAK T/R
Produkt ist nicht verfügbar
BUK9Y22-100E,115 Hersteller : NEXPERIA BUK9Y22-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 197A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 60.7mΩ
Mounting: SMD
Gate charge: 35.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK9Y22-100E,115 Hersteller : NEXPERIA BUK9Y22-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 197A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 60.7mΩ
Mounting: SMD
Gate charge: 35.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar