BUK9Y22-100E,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 1.35 EUR |
3000+ | 1.27 EUR |
7500+ | 1.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BUK9Y22-100E,115 Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote BUK9Y22-100E,115 nach Preis ab 0.59 EUR bis 3.07 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BUK9Y22-100E,115 | Hersteller : Nexperia | Trans MOSFET N-CH 100V 49A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 2550 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y22-100E,115 | Hersteller : Nexperia | Trans MOSFET N-CH 100V 49A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 2550 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9Y22-100E,115 | Hersteller : Nexperia | MOSFET BUK9Y22-100E/SOT669/LFPAK |
auf Bestellung 3012 Stücke: Lieferzeit 14-28 Tag (e) |
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BUK9Y22-100E,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 49A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 8191 Stücke: Lieferzeit 21-28 Tag (e) |
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BUK9Y22-100E,115 | Hersteller : NEXPERIA | Trans MOSFET N-CH 100V 49A Automotive 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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BUK9Y22-100E,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 197A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 60.7mΩ Mounting: SMD Gate charge: 35.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9Y22-100E,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 197A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 60.7mΩ Mounting: SMD Gate charge: 35.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |