BY229-800HE3/45

BY229-800HE3/45 Vishay General Semiconductor - Diodes Division


BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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Technische Details BY229-800HE3/45 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 800V 8A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 145 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.