BYG10J

BYG10J Diotec Semiconductor


byg10d.pdf Hersteller: Diotec Semiconductor
Rectifiers Diode, SMA, 600V, 1.5A
auf Bestellung 7490 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
120+0.43 EUR
171+ 0.3 EUR
205+ 0.25 EUR
500+ 0.2 EUR
1000+ 0.18 EUR
2500+ 0.14 EUR
7500+ 0.086 EUR
Mindestbestellmenge: 120
Produktrezensionen
Produktbewertung abgeben

Technische Details BYG10J Diotec Semiconductor

Category: SMD universal diodes, Description: Diode: rectifying; SMD; 600V; 1.5A; 1.5us; SMA; Ufmax: 1.15V; Ir: 50uA, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 0.6kV, Load current: 1.5A, Max. load current: 5A, Reverse recovery time: 1.5µs, Semiconductor structure: single diode, Features of semiconductor devices: avalanche breakdown effect, Case: SMA, Max. forward voltage: 1.15V, Max. forward impulse current: 27A, Leakage current: 50µA, Kind of package: reel; tape, Anzahl je Verpackung: 25 Stücke.

Weitere Produktangebote BYG10J

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
BYG10J Hersteller : Diotec Semiconductor byg10d.pdf Diode Switching 600V 1.5A 2-Pin SMA T/R
Produkt ist nicht verfügbar
BYG10J BYG10J Hersteller : Diotec Semiconductor byg10d.pdf Diode Switching 600V 1.5A 2-Pin SMA T/R
Produkt ist nicht verfügbar
BYG10J BYG10J Hersteller : DIOTEC SEMICONDUCTOR byg10d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 1.5us; SMA; Ufmax: 1.15V; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. load current: 5A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 27A
Leakage current: 50µA
Kind of package: reel; tape
Anzahl je Verpackung: 25 Stücke
Produkt ist nicht verfügbar
BYG10J BYG10J Hersteller : Diotec Semiconductor byg10d.pdf Description: IC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: SMA/DO-214AC
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
BYG10J BYG10J Hersteller : DIOTEC SEMICONDUCTOR byg10d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 1.5us; SMA; Ufmax: 1.15V; Ir: 50uA
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Max. load current: 5A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Case: SMA
Max. forward voltage: 1.15V
Max. forward impulse current: 27A
Leakage current: 50µA
Kind of package: reel; tape
Produkt ist nicht verfügbar