BYG10M-E3/TR3 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 7500+ | 0.24 EUR |
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Technische Details BYG10M-E3/TR3 Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V.
Weitere Produktangebote BYG10M-E3/TR3 nach Preis ab 0.23 EUR bis 0.92 EUR
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BYG10M-E3/TR3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 1KV 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
auf Bestellung 11983 Stücke: Lieferzeit 21-28 Tag (e) |
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BYG10M-E3/TR3 | Hersteller : Vishay General Semiconductor |
Rectifiers 1.5 Amp 1000 Volt |
auf Bestellung 12264 Stücke: Lieferzeit 14-28 Tag (e) |
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BYG10M-E3/TR3 | Hersteller : Vishay |
Rectifier Diode Switching 1KV 1.5A 4000ns 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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BYG10M-E3/TR3 | Hersteller : Vishay |
Rectifier Diode Switching 1KV 1.5A 4000ns 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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BYG10M-E3/TR3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 30A Case: SMA Max. forward voltage: 1.15V Kind of package: reel; tape Features of semiconductor devices: avalanche breakdown effect; glass passivated Leakage current: 10µA Type of diode: rectifying Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 4µs Anzahl je Verpackung: 7500 Stücke |
Produkt ist nicht verfügbar |
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BYG10M-E3/TR3 | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1.5A; 4us; SMA; Ufmax: 1.15V; Ifsm: 30A Max. off-state voltage: 1kV Load current: 1.5A Max. forward impulse current: 30A Case: SMA Max. forward voltage: 1.15V Kind of package: reel; tape Features of semiconductor devices: avalanche breakdown effect; glass passivated Leakage current: 10µA Type of diode: rectifying Mounting: SMD Semiconductor structure: single diode Reverse recovery time: 4µs |
Produkt ist nicht verfügbar |