BYG20J R3G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.4V
Max. forward impulse current: 30A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Case: SMA
Max. forward voltage: 1.4V
Max. forward impulse current: 30A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
145+ | 0.49 EUR |
284+ | 0.26 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details BYG20J R3G TAIWAN SEMICONDUCTOR
Description: DIODE GEN PURP 600V 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.
Weitere Produktangebote BYG20J R3G nach Preis ab 0.32 EUR bis 1.06 EUR
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BYG20J R3G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 1.5A; 75ns; SMA; Ufmax: 1.4V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Case: SMA Max. forward voltage: 1.4V Max. forward impulse current: 30A Kind of package: reel; tape |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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BYG20J R3G | Hersteller : Taiwan Semiconductor | Rectifiers 75ns, 1.5A, 600V, High Efficient Recovery Rectifier |
auf Bestellung 373 Stücke: Lieferzeit 14-28 Tag (e) |
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BYG20J R3G | Hersteller : Taiwan Semiconductor | Rectifier Diode Switching 600V 1.5A 75ns 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
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BYG20J R3G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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BYG20J R3G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 600V 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |