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BYG21MHE3_A/I

BYG21MHE3_A/I Vishay


byg21k.pdf Hersteller: Vishay
Rectifier Diode Switching 1KV 1.5A 120ns Automotive 2-Pin SMA T/R
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Technische Details BYG21MHE3_A/I Vishay

Description: DIODE AVALANCHE 1KV 1.5A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 120 ns, Technology: Avalanche, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Grade: Automotive, Qualification: AEC-Q101.

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BYG21MHE3_A/I BYG21MHE3_A/I Hersteller : Vishay byg21k.pdf Rectifier Diode Switching 1KV 1.5A 120ns Automotive AEC-Q101 2-Pin SMA T/R
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BYG21MHE3_A/I Hersteller : Vishay General Semiconductor - Diodes Division byg21k.pdf Description: DIODE AVALANCHE 1KV 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
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BYG21MHE3_A/I BYG21MHE3_A/I Hersteller : Vishay General Semiconductor byg21k.pdf Rectifiers 1.5A,1000V,120NS AEC-Q101 Qualified
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