BYM10-200-E3/97 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Avalanche
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.28 EUR |
10000+ | 0.25 EUR |
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Produktbewertung abgeben
Technische Details BYM10-200-E3/97 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Avalanche, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote BYM10-200-E3/97 nach Preis ab 0.29 EUR bis 1.09 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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BYM10-200-E3/97 | Hersteller : Vishay General Semiconductor | Rectifiers 200 Volt 1.0 Amp Glass Passivated |
auf Bestellung 28455 Stücke: Lieferzeit 14-28 Tag (e) |
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BYM10-200-E3/97 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Avalanche Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 39258 Stücke: Lieferzeit 21-28 Tag (e) |
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BYM10-200-E3/97 | Hersteller : Vishay | Rectifier Diode Switching 200V 1A 2-Pin DO-213AB T/R |
Produkt ist nicht verfügbar |
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BYM10-200-E3/97 | Hersteller : Vishay | Rectifier Diode Switching 200V 1A 2-Pin DO-213AB T/R |
Produkt ist nicht verfügbar |