BYM13-30-E3/96 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTTKY 30V 1A GL41
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: GL41 (DO-213AB)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.47 EUR |
| 3000+ | 0.42 EUR |
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Technische Details BYM13-30-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 1A GL41, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 110pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: GL41 (DO-213AB), Operating Temperature - Junction: -55°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A, Current - Reverse Leakage @ Vr: 500 µA @ 30 V.
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BYM13-30-E3/96 | Hersteller : Vishay General Semiconductor |
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BYM13-30-E3/96 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 30V 1A GL41 Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 110pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: GL41 (DO-213AB) Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V |
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