BYV32-100HE3/45 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE ARRAY GP 100V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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Technische Details BYV32-100HE3/45 Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 100V 18A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 18A, Supplier Device Package: TO-220-3, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.