Technische Details BYWB29-200-E3/45 Vishay
Description: DIODE GEN PURP 200V 8A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Weitere Produktangebote BYWB29-200-E3/45
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BYWB29-200-E3/45 | Hersteller : Vishay |
 Diode Switching 200V 8A 3-Pin(2+Tab) TO-263AB Tube |
Produkt ist nicht verfügbar |
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BYWB29-200-E3/45 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 8A TO263AB Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
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BYWB29-200-E3/45 | Hersteller : Vishay General Semiconductor |
Rectifiers 200 Volt 8.0A 25ns Single Glass Pass |
Produkt ist nicht verfügbar |