BZD27C110P-M3-18 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE ZENER 110V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 110 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-219AB (SMF)
Part Status: Active
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 82 V
auf Bestellung 7812 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 1.09 EUR |
| 28+ | 0.94 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.41 EUR |
| 2000+ | 0.37 EUR |
| 5000+ | 0.35 EUR |
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Technische Details BZD27C110P-M3-18 Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 110V 800MW DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 175°C, Voltage - Zener (Nom) (Vz): 110 V, Impedance (Max) (Zzt): 250 Ohms, Supplier Device Package: DO-219AB (SMF), Part Status: Active, Power - Max: 800 mW, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA, Current - Reverse Leakage @ Vr: 1 µA @ 82 V.
Weitere Produktangebote BZD27C110P-M3-18
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BZD27C110P-M3-18 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 110V 800MW DO219AB Packaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 110 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-219AB (SMF) Part Status: Active Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 82 V |
Produkt ist nicht verfügbar |
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BZD27C110P-M3-18 | Hersteller : Vishay Semiconductors |
Zener Diodes ZENER DIODE SMF DO219-M3 |
Produkt ist nicht verfügbar |