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BZD27C12PW

BZD27C12PW Taiwan Semiconductor Corporation

BZD27C11PW%20SERIES_D2203.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 1W SOD123W
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 1643 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.38 EUR
22+ 1.19 EUR
100+ 0.89 EUR
500+ 0.7 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
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Technische Details BZD27C12PW Taiwan Semiconductor Corporation

Description: DIODE ZENER 12V 1W SOD123W, Tolerance: ±5%, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Voltage - Zener (Nom) (Vz): 12 V, Impedance (Max) (Zzt): 7 Ohms, Supplier Device Package: SOD-123W, Part Status: Active, Power - Max: 1 W, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V.

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BZD27C12PW BZD27C12PW Hersteller : Taiwan Semiconductor bzd27c11pwseries_d2203.pdf Diode Zener Single 12V 5% 2300mW 2-Pin SOD-123W T/R
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
BZD27C12PW BZD27C12PW Hersteller : Taiwan Semiconductor bzd27c11pwseries_d2203.pdf Diode Zener Single 12V 5% 2300mW 2-Pin SOD-123W T/R
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
BZD27C12PW BZD27C12PW Hersteller : Taiwan Semiconductor Corporation BZD27C11PW%20SERIES_D2203.pdf Description: DIODE ZENER 12V 1W SOD123W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-123W
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
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