C3M0015065K Wolfspeed
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 47.6 EUR |
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Technische Details C3M0015065K Wolfspeed
Description: SICFET N-CH 650V 120A TO247-4L, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V, Power Dissipation (Max): 416W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 15.5mA, Supplier Device Package: TO-247-4L, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V.
Weitere Produktangebote C3M0015065K nach Preis ab 38.86 EUR bis 122.23 EUR
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C3M0015065K | Hersteller : Wolfspeed |
 650V silicon carbide MOSFET technology optimized for high performance power electronics applications |
auf Bestellung 615 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0015065K | Hersteller : Wolfspeed |
650V silicon carbide MOSFET technology optimized for high performance power electronics applications |
auf Bestellung 57220 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0015065K | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 650V 120A Automotive 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 3334 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0015065K | Hersteller : Wolfspeed |
650V silicon carbide MOSFET technology optimized for high performance power electronics applications |
auf Bestellung 3334 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0015065K | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 650V 120A Automotive 4-Pin(4+Tab) TO-247 Tube |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0015065K | Hersteller : Wolfspeed |
650V silicon carbide MOSFET technology optimized for high performance power electronics applications |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0015065K | Hersteller : Wolfspeed |
650V silicon carbide MOSFET technology optimized for high performance power electronics applications |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0015065K | Hersteller : Wolfspeed |
MOSFET SiC, MOSFET, 15mohm, 650V, TO-247-4, Industrial, Gen 3 |
auf Bestellung 628 Stücke: Lieferzeit 14-28 Tag (e) |
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C3M0015065K | Hersteller : Wolfspeed, Inc. |
Description: SICFET N-CH 650V 120A TO247-4L Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 55.8A, 15V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 15.5mA Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 5011 pF @ 400 V |
auf Bestellung 916 Stücke: Lieferzeit 21-28 Tag (e) |
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| C3M0015065K | Hersteller : Wolfspeed |
C3M0015065K |
auf Bestellung 403 Stücke: Lieferzeit 14-21 Tag (e) |
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| C3M0015065K | Hersteller : Wolfspeed(CREE) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 96A Pulsed drain current: 418A Power dissipation: 416W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 20mΩ Mounting: THT Gate charge: 188nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| C3M0015065K | Hersteller : Wolfspeed(CREE) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 96A; Idm: 418A; 416W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 96A Pulsed drain current: 418A Power dissipation: 416W Case: TO247-4 Gate-source voltage: -8...19V On-state resistance: 20mΩ Mounting: THT Gate charge: 188nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |