auf Bestellung 1605 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 27.87 EUR |
| 10+ | 24.2 EUR |
| 25+ | 22.77 EUR |
| 50+ | 21.36 EUR |
| 100+ | 18.24 EUR |
| 500+ | 16.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details C3M0065100J Wolfspeed
Description: SICFET N-CH 1000V 35A D2PAK-7, Packaging: Tube, Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V, Power Dissipation (Max): 113.5W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 5mA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V.
Weitere Produktangebote C3M0065100J nach Preis ab 16.16 EUR bis 52.49 EUR
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C3M0065100J | Hersteller : Wolfspeed |
 Trans MOSFET N-CH SiC 1KV 35A Automotive 8-Pin(7+Tab) D2PAK |
auf Bestellung 1605 Stücke: Lieferzeit 14-21 Tag (e) |
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C3M0065100J | Hersteller : Wolfspeed |
MOSFET 1000V 65mOhm G3 SiC MOSFET TO-263-7 |
auf Bestellung 922 Stücke: Lieferzeit 14-28 Tag (e) |
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C3M0065100J | Hersteller : Wolfspeed, Inc. |
Description: SICFET N-CH 1000V 35A D2PAK-7 Packaging: Tube Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 20A, 15V Power Dissipation (Max): 113.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 5mA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 600 V |
auf Bestellung 2236 Stücke: Lieferzeit 21-28 Tag (e) |
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C3M0065100J | Hersteller : WOLFSPEED |
Description: WOLFSPEED - C3M0065100J - Siliziumkarbid-MOSFET, Eins, n-Kanal, 35 A, 1 kV, 0.065 ohm, TO-263 (D2PAK) tariffCode: 85412900 Drain-Source-Spannung Vds: 1kV rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.1V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 113.5W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 15V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.065ohm |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
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| C3M0065100J | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 1KV 35A Automotive 8-Pin(7+Tab) D2PAK |
Produkt ist nicht verfügbar |
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C3M0065100J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1kV Drain current: 35A Power dissipation: 113.5W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 65mΩ Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Reverse recovery time: 14ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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C3M0065100J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1kV; 35A; 113.5W; D2PAK-7; 14ns Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1kV Drain current: 35A Power dissipation: 113.5W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 65mΩ Mounting: SMD Gate charge: 9nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Reverse recovery time: 14ns |
Produkt ist nicht verfügbar |