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C3M0280090J-TR

C3M0280090J-TR Wolfspeed, Inc.

C3M0280090J.pdf Hersteller: Wolfspeed, Inc.
Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+12.27 EUR
1600+ 11.04 EUR
Mindestbestellmenge: 800
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Technische Details C3M0280090J-TR Wolfspeed, Inc.

Description: SICFET N-CH 900V 11A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 1.2mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +18V, -8V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V.

Weitere Produktangebote C3M0280090J-TR nach Preis ab 10.35 EUR bis 19.47 EUR

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C3M0280090J-TR C3M0280090J-TR Hersteller : Wolfspeed C3M0280090J-2935330.pdf MOSFET G3 SiC MOSFET/ Reel 900V, 280 mOhm
auf Bestellung 317 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+15.94 EUR
10+ 13.65 EUR
25+ 12.38 EUR
100+ 11.39 EUR
250+ 10.71 EUR
500+ 10.35 EUR
Mindestbestellmenge: 4
C3M0280090J-TR C3M0280090J-TR Hersteller : Wolfspeed, Inc. C3M0280090J.pdf Description: SICFET N-CH 900V 11A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 7.5A, 15V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 600 V
auf Bestellung 2412 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+19.47 EUR
10+ 16.68 EUR
100+ 13.9 EUR
Mindestbestellmenge: 2
C3M0280090J-TR Hersteller : Wolfspeed c3m0280090j.pdf Trans MOSFET N-CH SiC 900V 11A 8-Pin(7+Tab) D2PAK T/R
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