C3M0350120J Wolfspeed
auf Bestellung 860 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 15.68 EUR |
| 10+ | 13.68 EUR |
| 50+ | 13.55 EUR |
| 100+ | 11.57 EUR |
| 500+ | 9.67 EUR |
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Technische Details C3M0350120J Wolfspeed
Description: SICFET N-CH 1200V 7.2A TO263-7, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V, Power Dissipation (Max): 40.8W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V.
Weitere Produktangebote C3M0350120J nach Preis ab 11.2 EUR bis 17.76 EUR
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C3M0350120J | Hersteller : Wolfspeed, Inc. |
 Description: SICFET N-CH 1200V 7.2A TO263-7Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V Power Dissipation (Max): 40.8W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V |
auf Bestellung 624 Stücke: Lieferzeit 21-28 Tag (e) |
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| C3M0350120J | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 1.2KV 7.2A 8-Pin(7+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| C3M0350120J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 5A Pulsed drain current: 20A Power dissipation: 40.8W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 525mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| C3M0350120J | Hersteller : Wolfspeed(CREE) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 5A; Idm: 20A; 40.8W Type of transistor: N-MOSFET Technology: C3M™; SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 5A Pulsed drain current: 20A Power dissipation: 40.8W Case: D2PAK-7 Gate-source voltage: -8...19V On-state resistance: 525mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |