CEDM7001 TR PBFREE Central Semiconductor Corp
Hersteller: Central Semiconductor CorpDescription: MOSFET N-CH 20V 100MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8000+ | 0.33 EUR |
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Technische Details CEDM7001 TR PBFREE Central Semiconductor Corp
Description: MOSFET N-CH 20V 100MA SOT883, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V, Power Dissipation (Max): 100mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-883, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): 10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V.
Weitere Produktangebote CEDM7001 TR PBFREE nach Preis ab 0.36 EUR bis 1.33 EUR
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CEDM7001 TR PBFREE | Hersteller : Central Semiconductor Corp |
Description: MOSFET N-CH 20V 100MA SOT883 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V Power Dissipation (Max): 100mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-883 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): 10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.57 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 9 pF @ 3 V |
auf Bestellung 8400 Stücke: Lieferzeit 10-14 Tag (e) |
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CEDM7001 TR PBFREE | Hersteller : Central Semiconductor |
MOSFET N-Channel MOSFET 20V 100mA |
auf Bestellung 269937 Stücke: Lieferzeit 14-28 Tag (e) |
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| CEDM7001 TR PBFREE | Hersteller : Central Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 0.1W; SOT883L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.1A Power dissipation: 0.1W Case: SOT883L On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 8000 Stücke |
Produkt ist nicht verfügbar |
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| CEDM7001 TR PBFREE | Hersteller : Central Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.1A; 0.1W; SOT883L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.1A Power dissipation: 0.1W Case: SOT883L On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |