Technische Details CPH6442-TL-E ON Semiconductor
Description: MOSFET N-CH 60V 6A 6CPH, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: 6-CPH, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V.
Weitere Produktangebote CPH6442-TL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
CPH6442-TL-E | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 60V 6A 6-Pin CPH T/R |
Produkt ist nicht verfügbar |
|
 |
CPH6442-TL-E | Hersteller : onsemi |
Description: MOSFET N-CH 60V 6A 6CPH Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 6-CPH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 20 V |
Produkt ist nicht verfügbar |