CSA2M-E3/I Vishay General Semiconductor
auf Bestellung 39936 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details CSA2M-E3/I Vishay General Semiconductor
Description: DIODE GEN PURP 1KV 1.6A DO214AC, Packaging: Tape & Reel (TR), Package / Case: DO-214AC, SMA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.1 µs, Technology: Standard, Capacitance @ Vr, F: 11pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.6A, Supplier Device Package: DO-214AC (SMA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote CSA2M-E3/I
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CSA2M-E3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1.6A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.1 µs Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1.6A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) |
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CSA2M-E3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1.6A DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.1 µs Technology: Standard Capacitance @ Vr, F: 11pF @ 4V, 1MHz Current - Average Rectified (Io): 1.6A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
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