CSD19531KCS Texas Instruments
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 80+ | 1.99 EUR |
| 100+ | 1.7 EUR |
| 250+ | 1.5 EUR |
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Technische Details CSD19531KCS Texas Instruments
Description: MOSFET N-CH 100V 100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V, Power Dissipation (Max): 214W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V.
Weitere Produktangebote CSD19531KCS nach Preis ab 2.21 EUR bis 5.12 EUR
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CSD19531KCS | Hersteller : TEXAS INSTRUMENTS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19531KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 214W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19531KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 7.7mOhm @ 60A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V |
auf Bestellung 158 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD19531KCS | Hersteller : Texas Instruments |
MOSFET 100V 6.4mOhm Pwr MOSFET |
auf Bestellung 638 Stücke: Lieferzeit 14-28 Tag (e) |
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CSD19531KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19531KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD19531KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |