D2SB60HD2G

D2SB60HD2G Taiwan Semiconductor Corporation


D2SB05%20SERIES_K2103.pdf Hersteller: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A GBL
Packaging: Tube
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details D2SB60HD2G Taiwan Semiconductor Corporation

Description: BRIDGE RECT 1PHASE 600V 2A GBL, Packaging: Tube, Package / Case: 4-SIP, GBL, Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: GBL, Part Status: Active, Voltage - Peak Reverse (Max): 600 V, Current - Average Rectified (Io): 2 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Grade: Automotive, Qualification: AEC-Q101.